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Design of Hybrid, High-Speed, Nonvolatile Ternary Content Addressable Memory Using CMOS and RRAM.

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Title: Design of Hybrid, High-Speed, Nonvolatile Ternary Content Addressable Memory Using CMOS and RRAM.
Authors: Gupta, Mohit1, Siddanath, Ravi S.1, Yadav, Layak Singh1, Gupta, Mudit1, Goswami, Manish1, Kandpal, Kavindra1, kavindra@iiita.ac.in
Source: Journal of Circuits, Systems & Computers; 1/30/2026, Vol. 35 Issue 2, p1-16, 16p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 188720270
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Design of Hybrid, High-Speed, Nonvolatile Ternary Content Addressable Memory Using CMOS and RRAM.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Circuits%2C+Systems+%26+Computers%22">Journal of Circuits, Systems & Computers</searchLink>; 1/30/2026, Vol. 35 Issue 2, p1-16, 16p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188720270
RecordInfo BibRecord:
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        Value: 10.1142/S0218126625503906
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      – Code: eng
        Text: English
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        PageCount: 16
        StartPage: 1
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      – TitleFull: Design of Hybrid, High-Speed, Nonvolatile Ternary Content Addressable Memory Using CMOS and RRAM.
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            NameFull: Gupta, Mohit
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            NameFull: Siddanath, Ravi S.
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            NameFull: Yadav, Layak Singh
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            NameFull: Goswami, Manish
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            – D: 30
              M: 01
              Text: 1/30/2026
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              Y: 2026
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              Value: 35
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