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Structural and Electrical Properties of Si-Doped β-Ga 2 O 3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature.

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Title: Structural and Electrical Properties of Si-Doped β-Ga 2 O 3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature.
Authors: Kim, Haechan1, Kubota, Yuta2, Matsushita, Nobuhiro2,3, Lee, Gonjae1,3, Hong, Jeongsoo1,2, hongjs@gachon.ac.kr
Source: Coatings (2079-6412); Oct2025, Vol. 15 Issue 10, p1181, 14p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 188956949
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PubType: Academic Journal
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  Data: Structural and Electrical Properties of Si-Doped β-Ga 2 O 3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature.
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  Data: <searchLink fieldCode="JN" term="%22Coatings+%282079-6412%29%22">Coatings (2079-6412)</searchLink>; Oct2025, Vol. 15 Issue 10, p1181, 14p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188956949
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        Value: 10.3390/coatings15101181
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      – Code: eng
        Text: English
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        PageCount: 14
        StartPage: 1181
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      – TitleFull: Structural and Electrical Properties of Si-Doped β-Ga 2 O 3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature.
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            NameFull: Kim, Haechan
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            NameFull: Kubota, Yuta
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            NameFull: Matsushita, Nobuhiro
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              M: 10
              Text: Oct2025
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              Y: 2025
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