APA (7th ed.) Citation

Lee, S., Lim, T., Priyadarshi, S., Lee, S., Sun, J., Kim, Y., & Jang, J. (2025). Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability. Advanced Materials Technologies, 10(21), 1. https://doi.org/10.1002/admt.202500811

Chicago Style (17th ed.) Citation

Lee, Solbee, Taebin Lim, Sunaina Priyadarshi, Seungho Lee, Jiwon Sun, Yuna Kim, and Jin Jang. "Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability." Advanced Materials Technologies 10, no. 21 (2025): 1. https://doi.org/10.1002/admt.202500811.

MLA (9th ed.) Citation

Lee, Solbee, et al. "Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability." Advanced Materials Technologies, vol. 10, no. 21, 2025, p. 1, https://doi.org/10.1002/admt.202500811.