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Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.

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Title: Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.
Authors: Lee, Solbee1, Lim, Taebin1, Priyadarshi, Sunaina1, Lee, Seungho1, Sun, Jiwon1, Kim, Yuna1, Jang, Jin1, jjang@khu.ac.kr
Source: Advanced Materials Technologies; 11/6/2025, Vol. 10 Issue 21, p1-12, 12p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 189132684
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Materials+Technologies%22">Advanced Materials Technologies</searchLink>; 11/6/2025, Vol. 10 Issue 21, p1-12, 12p
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RecordInfo BibRecord:
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        Value: 10.1002/admt.202500811
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      – Code: eng
        Text: English
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        PageCount: 12
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      – TitleFull: Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.
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            NameFull: Lee, Solbee
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            NameFull: Lim, Taebin
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            – D: 06
              M: 11
              Text: 11/6/2025
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              Y: 2025
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