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Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.

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Bibliographic Details
Title: Strong Two‐Dimensional Electron Gas at Crystalline and Amorphous InGaSnO Stack Interface for High Performance Transistors with High Temperature Stability.
Authors: Lee, Solbee1, Lim, Taebin1, Priyadarshi, Sunaina1, Lee, Seungho1, Sun, Jiwon1, Kim, Yuna1, Jang, Jin1, jjang@khu.ac.kr
Source: Advanced Materials Technologies; 11/6/2025, Vol. 10 Issue 21, p1-12, 12p
Database: Applied Science & Technology Source
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