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Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation.

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Title: Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation.
Authors: Ryu, Minjeong1, Woo, Jae Seung1, Kim, Yeonwoo1, Jeon, Joo Hyeon2, Cho, Sung In2, Choi, Woo Young1, wooyoung@snu.ac.kr
Source: Advanced Electronic Materials; Dec2025, Vol. 11 Issue 20, p1-18, 18p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 189766489
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; Dec2025, Vol. 11 Issue 20, p1-18, 18p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=189766489
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        Value: 10.1002/aelm.202500421
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        Text: English
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        PageCount: 18
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      – TitleFull: Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation.
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            NameFull: Cho, Sung In
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              M: 12
              Text: Dec2025
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              Y: 2025
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