A 200 MHz 1.22 fJ/bit/search single-ended content addressable memory cell design in 45-nm CMOS technology.
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| Title: | A 200 MHz 1.22 fJ/bit/search single-ended content addressable memory cell design in 45-nm CMOS technology. |
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| Authors: | Sangalang, Ralph Gerard B.1,2, ralphgerard.sangalang@g.batstate-u.edu.ph, Manalo, Andreu Kheiko G.3, Dalisay, Jeus Benedict L.4, Macasaet, Rhojine Niño M.5 |
| Source: | International Journal of Electronics; Jan2026, Vol. 113 Issue 1, p39-64, 26p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00207217 |
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| DOI: | 10.1080/00207217.2025.2497002 |
