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A 200 MHz 1.22 fJ/bit/search single-ended content addressable memory cell design in 45-nm CMOS technology.

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Title: A 200 MHz 1.22 fJ/bit/search single-ended content addressable memory cell design in 45-nm CMOS technology.
Authors: Sangalang, Ralph Gerard B.1,2, ralphgerard.sangalang@g.batstate-u.edu.ph, Manalo, Andreu Kheiko G.3, Dalisay, Jeus Benedict L.4, Macasaet, Rhojine Niño M.5
Source: International Journal of Electronics; Jan2026, Vol. 113 Issue 1, p39-64, 26p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 189849998
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Electronics%22">International Journal of Electronics</searchLink>; Jan2026, Vol. 113 Issue 1, p39-64, 26p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=189849998
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1080/00207217.2025.2497002
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      – Code: eng
        Text: English
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        PageCount: 26
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      – TitleFull: A 200 MHz 1.22 fJ/bit/search single-ended content addressable memory cell design in 45-nm CMOS technology.
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            NameFull: Manalo, Andreu Kheiko G.
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            NameFull: Dalisay, Jeus Benedict L.
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              Text: Jan2026
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              Y: 2026
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              Value: 113
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