APA (7th ed.) Citation

Lee, T., Choi, J., Park, S., Chung, S., Lee, G., Lim, J. H., . . . Koo, S. (2025). Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy. Journal of Applied Physics, 138(21), 1. https://doi.org/10.1063/5.0287493

Chicago Style (17th ed.) Citation

Lee, Tae-Hee, Ji-Soo Choi, Se-Rim Park, Seung-Hwan Chung, Geon-Hee Lee, Jae Hyeok Lim, Si-Young Bae, and Sang-Mo Koo. "Defect Analysis of Sn-doped Ga2O3/SiC Hetero-structured Schottky Diodes Using Deep Level Transient Spectroscopy." Journal of Applied Physics 138, no. 21 (2025): 1. https://doi.org/10.1063/5.0287493.

MLA (9th ed.) Citation

Lee, Tae-Hee, et al. "Defect Analysis of Sn-doped Ga2O3/SiC Hetero-structured Schottky Diodes Using Deep Level Transient Spectroscopy." Journal of Applied Physics, vol. 138, no. 21, 2025, p. 1, https://doi.org/10.1063/5.0287493.