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Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy.

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Title: Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy.
Authors: Lee, Tae-Hee1, Choi, Ji-Soo1, Park, Se-Rim1, Chung, Seung-Hwan1, Lee, Geon-Hee1, Lim, Jae Hyeok2, Bae, Si-Young3, Koo, Sang-Mo1, smkoo@kw.ac.kr
Source: Journal of Applied Physics; 12/5/2025, Vol. 138 Issue 21, p1-7, 7p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 189857395
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy.
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  Data: <searchLink fieldCode="AU" term="%22Lee%2C+Tae-Hee%22">Lee, Tae-Hee</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Choi%2C+Ji-Soo%22">Choi, Ji-Soo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Park%2C+Se-Rim%22">Park, Se-Rim</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chung%2C+Seung-Hwan%22">Chung, Seung-Hwan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+Geon-Hee%22">Lee, Geon-Hee</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Lim%2C+Jae+Hyeok%22">Lim, Jae Hyeok</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Bae%2C+Si-Young%22">Bae, Si-Young</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Koo%2C+Sang-Mo%22">Koo, Sang-Mo</searchLink><relatesTo>1</relatesTo>, <i>smkoo@kw.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 12/5/2025, Vol. 138 Issue 21, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=189857395
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    Identifiers:
      – Type: doi
        Value: 10.1063/5.0287493
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 7
        StartPage: 1
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      – TitleFull: Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy.
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            NameFull: Lee, Tae-Hee
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            NameFull: Choi, Ji-Soo
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            NameFull: Park, Se-Rim
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            NameFull: Chung, Seung-Hwan
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            NameFull: Lee, Geon-Hee
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            NameFull: Lim, Jae Hyeok
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            NameFull: Bae, Si-Young
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            NameFull: Koo, Sang-Mo
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          Dates:
            – D: 05
              M: 12
              Text: 12/5/2025
              Type: published
              Y: 2025
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              Value: 138
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              Value: 21
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            – TitleFull: Journal of Applied Physics
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