APA (7th ed.) Citation

Sharma, K., Banerjee, R., Nandi, A., Gopal, R. K., & Mitra, C. (2026). Defect-state engineering in (Bi,Sb)2Te3 topological insulators via indium doping. Journal of Physics D: Applied Physics, 59(2), 1. https://doi.org/10.1088/1361-6463/ae2c9d

Chicago Style (17th ed.) Citation

Sharma, Kanav, Ritam Banerjee, Anuvab Nandi, Radha Krishna Gopal, and Chiranjib Mitra. "Defect-state Engineering in (Bi,Sb)2Te3 Topological Insulators via Indium Doping." Journal of Physics D: Applied Physics 59, no. 2 (2026): 1. https://doi.org/10.1088/1361-6463/ae2c9d.

MLA (9th ed.) Citation

Sharma, Kanav, et al. "Defect-state Engineering in (Bi,Sb)2Te3 Topological Insulators via Indium Doping." Journal of Physics D: Applied Physics, vol. 59, no. 2, 2026, p. 1, https://doi.org/10.1088/1361-6463/ae2c9d.