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Defect-state engineering in (Bi,Sb)2Te3 topological insulators via indium doping.

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Title: Defect-state engineering in (Bi,Sb)2Te3 topological insulators via indium doping.
Authors: Sharma, Kanav1, Banerjee, Ritam1, Nandi, Anuvab1, Gopal, Radha Krishna2, Mitra, Chiranjib1, chiranjib@iiserkol.ac.in
Source: Journal of Physics D: Applied Physics; 2026, Vol. 59 Issue 2, p1-9, 9p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 190589843
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Physics+D%3A+Applied+Physics%22">Journal of Physics D: Applied Physics</searchLink>; 2026, Vol. 59 Issue 2, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=190589843
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        Value: 10.1088/1361-6463/ae2c9d
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      – Code: eng
        Text: English
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      – TitleFull: Defect-state engineering in (Bi,Sb)2Te3 topological insulators via indium doping.
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            NameFull: Sharma, Kanav
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            NameFull: Nandi, Anuvab
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              Text: 2026
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              Y: 2026
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