View in EDS

Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability.

Saved in:
Bibliographic Details
Title: Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability.
Authors: Ramesh, Rahul1, rahulk129@gmail.com, Stathopoulos, Spyros1, Kumar, Sanjay1,2, rahulk129@gmail.com, Levene, Hannah1, Yadav, Deepika1, Tsiamis, Andreas1, Prodromakis, Themis1, rahulk129@gmail.com
Source: Frontiers in Nanotechnology (2673-3013); 2026, p1-9, 9p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 191167175
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Ramesh%2C+Rahul%22">Ramesh, Rahul</searchLink><relatesTo>1</relatesTo>, <i>rahulk129@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Stathopoulos%2C+Spyros%22">Stathopoulos, Spyros</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kumar%2C+Sanjay%22">Kumar, Sanjay</searchLink><relatesTo>1,2</relatesTo>, <i>rahulk129@gmail.com</i><br /><searchLink fieldCode="AU" term="%22Levene%2C+Hannah%22">Levene, Hannah</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yadav%2C+Deepika%22">Yadav, Deepika</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tsiamis%2C+Andreas%22">Tsiamis, Andreas</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Prodromakis%2C+Themis%22">Prodromakis, Themis</searchLink><relatesTo>1</relatesTo>, <i>rahulk129@gmail.com</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Frontiers+in+Nanotechnology+%282673-3013%29%22">Frontiers in Nanotechnology (2673-3013)</searchLink>; 2026, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=191167175
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3389/fnano.2026.1729291
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1
    Titles:
      – TitleFull: Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Ramesh, Rahul
      – PersonEntity:
          Name:
            NameFull: Stathopoulos, Spyros
      – PersonEntity:
          Name:
            NameFull: Kumar, Sanjay
      – PersonEntity:
          Name:
            NameFull: Levene, Hannah
      – PersonEntity:
          Name:
            NameFull: Yadav, Deepika
      – PersonEntity:
          Name:
            NameFull: Tsiamis, Andreas
      – PersonEntity:
          Name:
            NameFull: Prodromakis, Themis
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 28
              M: 01
              Text: 2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 26733013
          Titles:
            – TitleFull: Frontiers in Nanotechnology (2673-3013)
              Type: main
ResultId 1