Kim, M., Tran, D. Q., Paskov, P. P., Choi, U., Nam, O., & Darakchieva, V. (2026). Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs. Applied Physics Letters, 128(4), 1. https://doi.org/10.1063/5.0310464
Chicago Style (17th ed.) CitationKim, Minho, Dat Q. Tran, Plamen P. Paskov, Uiho Choi, Okhyun Nam, and Vanya Darakchieva. "Impact of AlN Buffer Thickness on Electrical and Thermal Characteristics of AlGaN/GaN/AlN HEMTs." Applied Physics Letters 128, no. 4 (2026): 1. https://doi.org/10.1063/5.0310464.
MLA (9th ed.) CitationKim, Minho, et al. "Impact of AlN Buffer Thickness on Electrical and Thermal Characteristics of AlGaN/GaN/AlN HEMTs." Applied Physics Letters, vol. 128, no. 4, 2026, p. 1, https://doi.org/10.1063/5.0310464.