APA (7th ed.) Citation

Kim, M., Tran, D. Q., Paskov, P. P., Choi, U., Nam, O., & Darakchieva, V. (2026). Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs. Applied Physics Letters, 128(4), 1. https://doi.org/10.1063/5.0310464

Chicago Style (17th ed.) Citation

Kim, Minho, Dat Q. Tran, Plamen P. Paskov, Uiho Choi, Okhyun Nam, and Vanya Darakchieva. "Impact of AlN Buffer Thickness on Electrical and Thermal Characteristics of AlGaN/GaN/AlN HEMTs." Applied Physics Letters 128, no. 4 (2026): 1. https://doi.org/10.1063/5.0310464.

MLA (9th ed.) Citation

Kim, Minho, et al. "Impact of AlN Buffer Thickness on Electrical and Thermal Characteristics of AlGaN/GaN/AlN HEMTs." Applied Physics Letters, vol. 128, no. 4, 2026, p. 1, https://doi.org/10.1063/5.0310464.

Warning: These citations may not always be 100% accurate.