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Experimental and computational study of the high-temperature 2DEG mobility in AlGaN/GaN heterostructures.

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Title: Experimental and computational study of the high-temperature 2DEG mobility in AlGaN/GaN heterostructures.
Authors: Hosseinigheidari, Matinehsadat1, Datta, Animesh1, Niroula, John2, Luo, Shisong3, Zhao, Yuji3, Palacios, Tomás2, Singisetti, Uttam1, uttamsin@buffalo.edu
Source: Applied Physics Letters; 2/16/2029, Vol. 128 Issue 7, p1-7, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 191767816
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Experimental and computational study of the high-temperature 2DEG mobility in AlGaN/GaN heterostructures.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 2/16/2029, Vol. 128 Issue 7, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=191767816
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/5.0315888
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      – Code: eng
        Text: English
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        PageCount: 7
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      – TitleFull: Experimental and computational study of the high-temperature 2DEG mobility in AlGaN/GaN heterostructures.
        Type: main
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            NameFull: Hosseinigheidari, Matinehsadat
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            NameFull: Datta, Animesh
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            NameFull: Niroula, John
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            NameFull: Luo, Shisong
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            NameFull: Zhao, Yuji
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            NameFull: Palacios, Tomás
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              M: 02
              Text: 2/16/2029
              Type: published
              Y: 2026
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            – TitleFull: Applied Physics Letters
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