APA (7th ed.) Citation

Ye, S., & Nishioka, K. (2026). Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM. Advanced Electronic Materials, 12(5), 1. https://doi.org/10.1002/aelm.202500692

Chicago Style (17th ed.) Citation

Ye, Shujun, and Koichi Nishioka. "Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM." Advanced Electronic Materials 12, no. 5 (2026): 1. https://doi.org/10.1002/aelm.202500692.

MLA (9th ed.) Citation

Ye, Shujun, and Koichi Nishioka. "Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM." Advanced Electronic Materials, vol. 12, no. 5, 2026, p. 1, https://doi.org/10.1002/aelm.202500692.