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Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM.

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Title: Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM.
Authors: Ye, Shujun1,2,3, ye.shujun@bit.edu.cn, Nishioka, Koichi1,2,3
Source: Advanced Electronic Materials; 3/9/2026, Vol. 12 Issue 5, p1-17, 17p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 192176533
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM.
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  Data: <searchLink fieldCode="AU" term="%22Ye%2C+Shujun%22">Ye, Shujun</searchLink><relatesTo>1,2,3</relatesTo>, <i>ye.shujun@bit.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Nishioka%2C+Koichi%22">Nishioka, Koichi</searchLink><relatesTo>1,2,3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; 3/9/2026, Vol. 12 Issue 5, p1-17, 17p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192176533
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      – Type: doi
        Value: 10.1002/aelm.202500692
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      – Code: eng
        Text: English
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        PageCount: 17
        StartPage: 1
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      – TitleFull: Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM.
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            NameFull: Ye, Shujun
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            NameFull: Nishioka, Koichi
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          Dates:
            – D: 09
              M: 03
              Text: 3/9/2026
              Type: published
              Y: 2026
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              Value: 12
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