APA (7th ed.) Citation

Yu, B., Zhang, H., Liu, H., Li, J., Ye, F., Chen, L., . . . Guo, W. (2026). GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers. Applied Physics Letters, 128(9), 1. https://doi.org/10.1063/5.0300073

Chicago Style (17th ed.) Citation

Yu, Bowei, et al. "GaN HEMT with Improved Electrical Performance Enabled by Hybrid AlN Nucleation Layers." Applied Physics Letters 128, no. 9 (2026): 1. https://doi.org/10.1063/5.0300073.

MLA (9th ed.) Citation

Yu, Bowei, et al. "GaN HEMT with Improved Electrical Performance Enabled by Hybrid AlN Nucleation Layers." Applied Physics Letters, vol. 128, no. 9, 2026, p. 1, https://doi.org/10.1063/5.0300073.