GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers.
Saved in:
| Title: | GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers. |
|---|---|
| Authors: | Yu, Bowei1,2, Zhang, Haochen1, Liu, Hongyu2, Li, Jiayao1,2, Ye, Fang2, Chen, Li2, Tang, Jun3, Qi, Shengli4, Liu, Zhibin5, Sun, Haiding1, haiding@ustc.edu.cn, Ye, Jichun2, Guo, Wei2, haiding@ustc.edu.cn |
| Source: | Applied Physics Letters; 3/2/2026, Vol. 128 Issue 9, p1-8, 8p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
|---|---|
| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 192210236 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Yu%2C+Bowei%22">Yu, Bowei</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Haochen%22">Zhang, Haochen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Hongyu%22">Liu, Hongyu</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Jiayao%22">Li, Jiayao</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ye%2C+Fang%22">Ye, Fang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+Li%22">Chen, Li</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+Jun%22">Tang, Jun</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Qi%2C+Shengli%22">Qi, Shengli</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Zhibin%22">Liu, Zhibin</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AU" term="%22Sun%2C+Haiding%22">Sun, Haiding</searchLink><relatesTo>1</relatesTo>, <i>haiding@ustc.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Ye%2C+Jichun%22">Ye, Jichun</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Guo%2C+Wei%22">Guo, Wei</searchLink><relatesTo>2</relatesTo>, <i>haiding@ustc.edu.cn</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 3/2/2026, Vol. 128 Issue 9, p1-8, 8p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192210236 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/5.0300073 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 8 StartPage: 1 Titles: – TitleFull: GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Yu, Bowei – PersonEntity: Name: NameFull: Zhang, Haochen – PersonEntity: Name: NameFull: Liu, Hongyu – PersonEntity: Name: NameFull: Li, Jiayao – PersonEntity: Name: NameFull: Ye, Fang – PersonEntity: Name: NameFull: Chen, Li – PersonEntity: Name: NameFull: Tang, Jun – PersonEntity: Name: NameFull: Qi, Shengli – PersonEntity: Name: NameFull: Liu, Zhibin – PersonEntity: Name: NameFull: Sun, Haiding – PersonEntity: Name: NameFull: Ye, Jichun – PersonEntity: Name: NameFull: Guo, Wei IsPartOfRelationships: – BibEntity: Dates: – D: 02 M: 03 Text: 3/2/2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 00036951 Numbering: – Type: volume Value: 128 – Type: issue Value: 9 Titles: – TitleFull: Applied Physics Letters Type: main |
| ResultId | 1 |
