GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers.
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| Title: | GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers. |
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| Authors: | Yu, Bowei1,2, Zhang, Haochen1, Liu, Hongyu2, Li, Jiayao1,2, Ye, Fang2, Chen, Li2, Tang, Jun3, Qi, Shengli4, Liu, Zhibin5, Sun, Haiding1, haiding@ustc.edu.cn, Ye, Jichun2, Guo, Wei2, haiding@ustc.edu.cn |
| Source: | Applied Physics Letters; 3/2/2026, Vol. 128 Issue 9, p1-8, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/5.0300073 |
