Oscillations in GaN Diode with 2D-h-BN – Layer.
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| Title: | Oscillations in GaN Diode with 2D-h-BN – Layer. |
|---|---|
| Authors: | Zozulia, V. O.1, v.zozulia@karazin.ua, Botsula, O. V.1, Khodachok, Y. S.1, Prykhodko, K. H.1, Sichevska, L. V.1 |
| Source: | Journal of Nano- & Electronic Physics; 2026, Vol. 18 Issue 1, p01026-1-01026-5, 5p |
| Database: | Applied Science & Technology Source |
| FullText | Links: – Type: pdflink Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 192213507 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192213507 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.21272/jnep.18(1).01026 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 01026-1 Titles: – TitleFull: Oscillations in GaN Diode with 2D-h-BN – Layer. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zozulia, V. O. – PersonEntity: Name: NameFull: Botsula, O. V. – PersonEntity: Name: NameFull: Khodachok, Y. S. – PersonEntity: Name: NameFull: Prykhodko, K. H. – PersonEntity: Name: NameFull: Sichevska, L. V. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 01 Text: 2026 Type: published Y: 2026 Identifiers: – Type: issn-print Value: 20776772 Numbering: – Type: volume Value: 18 – Type: issue Value: 1 Titles: – TitleFull: Journal of Nano- & Electronic Physics Type: main |
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