Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications.

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Title: Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications.
Authors: Lee, Jin Wook1, Kim, Changha1, Park, Geun Tae1, Baek, Seung Hun1, Shin, Myeong Su1, Choi, Woo Young1, wooyoung@snu.ac.kr
Source: Advanced Intelligent Systems (2640-4567); Mar2026, Vol. 8 Issue 3, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
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AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Intelligent+Systems+%282640-4567%29%22">Advanced Intelligent Systems (2640-4567)</searchLink>; Mar2026, Vol. 8 Issue 3, p1-10, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192374319
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        Value: 10.1002/aisy.202500586
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      – Code: eng
        Text: English
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        PageCount: 10
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      – TitleFull: Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications.
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            NameFull: Lee, Jin Wook
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            NameFull: Kim, Changha
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            NameFull: Park, Geun Tae
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            NameFull: Baek, Seung Hun
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            NameFull: Shin, Myeong Su
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              M: 03
              Text: Mar2026
              Type: published
              Y: 2026
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