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A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications.

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Title: A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications.
Authors: Greco, Francesco1, Arnieri, Emilio2, emilio.arnieri@unical.it, Gokdemir, Melih2, Alramadan, Mohammed2, Amendola, Giandomenico2, Ciccognani, Walter3, Limiti, Ernesto3, Ezzeddine, Hussein4, Massoni, Enrico4, Boccia, Luigi2, Xu, Jin, xujin227@nwpu.edu.cn
Source: International Journal of RF & Microwave Computer-Aided Engineering; 3/28/2026, Vol. 2026, p1-8, 8p
Database: Applied Science & Technology Source
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  Data: A 130‐nm SiGe BiCMOS On‐Chip Diplexer With High‐Q Inductors for K/Ka‐Band Applications.
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        Value: 10.1155/mmce/3361218
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              Text: 3/28/2026
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              Y: 2026
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