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Capacitive Amplification toward Boltzmann‐Limit Switching in WSe2 Reconfigurable Field‐Effect Transistors.

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Title: Capacitive Amplification toward Boltzmann‐Limit Switching in WSe2 Reconfigurable Field‐Effect Transistors.
Authors: Yi, Jiali1, Shuai, Qin1, Wu, Guangcheng1, Wu, Haifeng1, Zhu, Chenguang1, Sun, Xingxia1, Zong, Qijun1, qijunzong@hnu.edu.cn, Liao, Yihan1, Zhu, Xiaoli1, Fan, Xiulian2, Zhang, Zhengwei2, Zhou, Yu2, Wang, Xiao1, Li, Dong1, liidong@hnu.edu.cn, Pan, Anlian1,3, anlian.pan@hnu.edu.cn
Source: Advanced Functional Materials; 4/2/2026, Vol. 36 Issue 27, p1-7, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 192765878
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Capacitive Amplification toward Boltzmann‐Limit Switching in WSe2 Reconfigurable Field‐Effect Transistors.
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        Value: 10.1002/adfm.202524990
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        Text: English
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              Text: 4/2/2026
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