Retention improvement in vertical NAND flash memory using block soft erase scheme.

Saved in:
Bibliographic Details
Title: Retention improvement in vertical NAND flash memory using block soft erase scheme.
Authors: Park, Sung-Ho1, Shin, Dongbeen1, Oh, Mingyun1, Yang, Yeongheon2, Jung, Gyuweon1, gwjung@snu.ac.kr, Lee, Jong-Ho1, gwjung@snu.ac.kr
Source: Applied Physics Letters; 4/13/2026, Vol. 128 Issue 15, p1-5, 5p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0310928