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Retention improvement in vertical NAND flash memory using block soft erase scheme.

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Title: Retention improvement in vertical NAND flash memory using block soft erase scheme.
Authors: Park, Sung-Ho1, Shin, Dongbeen1, Oh, Mingyun1, Yang, Yeongheon2, Jung, Gyuweon1, gwjung@snu.ac.kr, Lee, Jong-Ho1, gwjung@snu.ac.kr
Source: Applied Physics Letters; 4/13/2026, Vol. 128 Issue 15, p1-5, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193098388
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 4/13/2026, Vol. 128 Issue 15, p1-5, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193098388
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        Value: 10.1063/5.0310928
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      – Code: eng
        Text: English
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      – TitleFull: Retention improvement in vertical NAND flash memory using block soft erase scheme.
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            NameFull: Park, Sung-Ho
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            NameFull: Shin, Dongbeen
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            NameFull: Oh, Mingyun
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              Text: 4/13/2026
              Type: published
              Y: 2026
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