APA (7th ed.) Citation

XU, Y., HU, Y., SUN, S., & LAI, T. (2021). Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition. Journal of Electronic Materials, 50(2), 491. https://doi.org/10.1007/s11664-020-08599-5

Chicago Style (17th ed.) Citation

XU, YONGKANG, YIFENG HU, SONG SUN, and TIANSHU LAI. "Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 During Phase Transition." Journal of Electronic Materials 50, no. 2 (2021): 491. https://doi.org/10.1007/s11664-020-08599-5.

MLA (9th ed.) Citation

XU, YONGKANG, et al. "Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 During Phase Transition." Journal of Electronic Materials, vol. 50, no. 2, 2021, p. 491, https://doi.org/10.1007/s11664-020-08599-5.