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Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition.

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Title: Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition.
Authors: XU, YONGKANG1, HU, YIFENG1,2, hyf@jsut.edu.cn, SUN, SONG1, LAI, TIANSHU3, stslts@mail.sysu.edu.cn
Source: Journal of Electronic Materials; 2021, Vol. 50 Issue 2, p491-496, 6p, 1 Color Photograph, 4 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193150510
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; 2021, Vol. 50 Issue 2, p491-496, 6p, 1 Color Photograph, 4 Graphs
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1007/s11664-020-08599-5
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 491
    Titles:
      – TitleFull: Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition.
        Type: main
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            NameFull: XU, YONGKANG
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            NameFull: HU, YIFENG
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            NameFull: SUN, SONG
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            NameFull: LAI, TIANSHU
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            – D: 01
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              Text: 2021
              Type: published
              Y: 2021
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              Value: 03615235
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              Value: 50
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              Value: 2
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            – TitleFull: Journal of Electronic Materials
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