Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition.

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Bibliographic Details
Title: Changes in Resistance and Bandgap of V2O5 and Ge2Sb2Te5 during Phase Transition.
Authors: XU, YONGKANG1, HU, YIFENG1,2, hyf@jsut.edu.cn, SUN, SONG1, LAI, TIANSHU3, stslts@mail.sysu.edu.cn
Source: Journal of Electronic Materials; 2021, Vol. 50 Issue 2, p491-496, 6p, 1 Color Photograph, 4 Graphs
Database: Applied Science & Technology Source
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