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High Operation Density Logic‐Gates for Multi‐Bit Arithmetic Logic Unit Based on Multi‐Region Barrier Modulation Optoelectronic Transistor.

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Title: High Operation Density Logic‐Gates for Multi‐Bit Arithmetic Logic Unit Based on Multi‐Region Barrier Modulation Optoelectronic Transistor.
Authors: Wang, Tiansheng1, Ji, Lingxuan1, Wang, Hao1, Pan, Yuan1, Huang, Zibin1, Chen, Hongyu1, chenhy@m.scnu.edu.cn
Source: Advanced Functional Materials; 4/30/2026, Vol. 36 Issue 35, p1-15, 15p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193403053
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: High Operation Density Logic‐Gates for Multi‐Bit Arithmetic Logic Unit Based on Multi‐Region Barrier Modulation Optoelectronic Transistor.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>; 4/30/2026, Vol. 36 Issue 35, p1-15, 15p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193403053
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      – Type: doi
        Value: 10.1002/adfm.202526772
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      – Code: eng
        Text: English
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        PageCount: 15
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      – TitleFull: High Operation Density Logic‐Gates for Multi‐Bit Arithmetic Logic Unit Based on Multi‐Region Barrier Modulation Optoelectronic Transistor.
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            NameFull: Ji, Lingxuan
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            NameFull: Wang, Hao
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            – D: 30
              M: 04
              Text: 4/30/2026
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              Y: 2026
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