APA (7th ed.) Citation

Wang, N., Pan, D., Huang, L., Liu, L., Liu, Y., Dai, Z., . . . Yao, J. (2026). Continuous Domain Quasi-Bound State Enhances the Nonlinear Effects of Silicon Carbide. Photonics, 13(4), 311. https://doi.org/10.3390/photonics13040311

Chicago Style (17th ed.) Citation

Wang, Ning, et al. "Continuous Domain Quasi-Bound State Enhances the Nonlinear Effects of Silicon Carbide." Photonics 13, no. 4 (2026): 311. https://doi.org/10.3390/photonics13040311.

MLA (9th ed.) Citation

Wang, Ning, et al. "Continuous Domain Quasi-Bound State Enhances the Nonlinear Effects of Silicon Carbide." Photonics, vol. 13, no. 4, 2026, p. 311, https://doi.org/10.3390/photonics13040311.