View in EDS HTML Full Text PDF Full Text

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review.

Saved in:
Bibliographic Details
Title: Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review.
Authors: Zhao, Haocheng1, Firdaus, Amirul1, Farizuan, Muhammad1, Tan, Weng-Hooi1, Kawarada, Hiroshi2, Falina, Shaili3, shailifalina@usm.my, Syamsul, Mohd1, nasyriq@usm.my
Source: Discover Nano; 4/30/2026, Vol. 21 Issue 1, p1-52, 52p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:27319229
DOI:10.1186/s11671-026-04571-0