View in EDS HTML Full Text PDF Full Text

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review.

Saved in:
Bibliographic Details
Title: Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review.
Authors: Zhao, Haocheng1, Firdaus, Amirul1, Farizuan, Muhammad1, Tan, Weng-Hooi1, Kawarada, Hiroshi2, Falina, Shaili3, shailifalina@usm.my, Syamsul, Mohd1, nasyriq@usm.my
Source: Discover Nano; 4/30/2026, Vol. 21 Issue 1, p1-52, 52p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193494489
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Zhao%2C+Haocheng%22">Zhao, Haocheng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Firdaus%2C+Amirul%22">Firdaus, Amirul</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Farizuan%2C+Muhammad%22">Farizuan, Muhammad</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tan%2C+Weng-Hooi%22">Tan, Weng-Hooi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kawarada%2C+Hiroshi%22">Kawarada, Hiroshi</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Falina%2C+Shaili%22">Falina, Shaili</searchLink><relatesTo>3</relatesTo>, <i>shailifalina@usm.my</i><br /><searchLink fieldCode="AU" term="%22Syamsul%2C+Mohd%22">Syamsul, Mohd</searchLink><relatesTo>1</relatesTo>, <i>nasyriq@usm.my</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Discover+Nano%22">Discover Nano</searchLink>; 4/30/2026, Vol. 21 Issue 1, p1-52, 52p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193494489
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1186/s11671-026-04571-0
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 52
        StartPage: 1
    Titles:
      – TitleFull: Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Zhao, Haocheng
      – PersonEntity:
          Name:
            NameFull: Firdaus, Amirul
      – PersonEntity:
          Name:
            NameFull: Farizuan, Muhammad
      – PersonEntity:
          Name:
            NameFull: Tan, Weng-Hooi
      – PersonEntity:
          Name:
            NameFull: Kawarada, Hiroshi
      – PersonEntity:
          Name:
            NameFull: Falina, Shaili
      – PersonEntity:
          Name:
            NameFull: Syamsul, Mohd
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 30
              M: 04
              Text: 4/30/2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 27319229
          Numbering:
            – Type: volume
              Value: 21
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Discover Nano
              Type: main
ResultId 1