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Thermal behavior analysis of Raman lasing in 4H-SiC microresonators.

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Title: Thermal behavior analysis of Raman lasing in 4H-SiC microresonators.
Authors: Wang, Yongsheng1, Zhang, Shuangyou1, Lu, Yaoqin1, Afridi, Adnan Ali1, Shi, Xiaodong2, Ren, Yurong1, Chi, Mingjun1, Rottwitt, Karsten1, Ou, Haiyan1, haou@dtu.dk
Source: Applied Physics Letters; 5/4/2026, Vol. 128 Issue 18, p1-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193630280
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Thermal behavior analysis of Raman lasing in 4H-SiC microresonators.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193630280
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      – Type: doi
        Value: 10.1063/5.0318996
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 1
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      – TitleFull: Thermal behavior analysis of Raman lasing in 4H-SiC microresonators.
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            NameFull: Zhang, Shuangyou
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              Text: 5/4/2026
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              Y: 2026
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