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Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes.

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Title: Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes.
Authors: Encomendero, Jimy1, jje64@cornell.edu, Pieczulewski, Naomi2, Chung, Eegene3, Protasenko, Vladimir1, Muller, David A.4,5, Jena, Debdeep1,2,5, djena@cornell.edu, Xing, Huili Grace1,2,5, grace.xing@cornell.edu
Source: Advanced Electronic Materials; 5/11/2026, Vol. 12 Issue 9, p1-12, 12p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193656344
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193656344
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      – Type: doi
        Value: 10.1002/aelm.202500419
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      – Code: eng
        Text: English
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        PageCount: 12
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      – TitleFull: Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes.
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            NameFull: Encomendero, Jimy
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            NameFull: Pieczulewski, Naomi
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            NameFull: Chung, Eegene
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            NameFull: Protasenko, Vladimir
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            NameFull: Muller, David A.
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            – D: 11
              M: 05
              Text: 5/11/2026
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              Y: 2026
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