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Low-breakdown, high-α SrTiO3 varistors via grain-boundary engineering with ZnBi2O4.

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Bibliographic Details
Title: Low-breakdown, high-α SrTiO3 varistors via grain-boundary engineering with ZnBi2O4.
Authors: Hsiang, Hsing-I.1, hsingi@mail.ncku.edu.tw, Lin, Che-Cheng1
Source: Journal of Materials Science: Materials in Electronics; May2026, Vol. 37 Issue 15, p1-15, 15p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194159226
AccessLevel: 2
PubType: Academic Journal
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  Data: Low-breakdown, high-α SrTiO3 varistors via grain-boundary engineering with ZnBi2O4.
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  Data: <searchLink fieldCode="AU" term="%22Hsiang%2C+Hsing-I%2E%22">Hsiang, Hsing-I.</searchLink><relatesTo>1</relatesTo>, <i>hsingi@mail.ncku.edu.tw</i><br /><searchLink fieldCode="AU" term="%22Lin%2C+Che-Cheng%22">Lin, Che-Cheng</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; May2026, Vol. 37 Issue 15, p1-15, 15p
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        Value: 10.1007/s10854-026-17592-3
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      – Code: eng
        Text: English
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        PageCount: 15
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      – TitleFull: Low-breakdown, high-α SrTiO3 varistors via grain-boundary engineering with ZnBi2O4.
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            NameFull: Hsiang, Hsing-I.
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            NameFull: Lin, Che-Cheng
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            – D: 21
              M: 05
              Text: May2026
              Type: published
              Y: 2026
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