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Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation.

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Bibliographic Details
Title: Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation.
Authors: Lee, Jun‐Yeoub1, Hwang, Taewon2, Choi, Su‐Hwan1, Oh, Hye‐Jin2, Park, Chang‐Kyun3, Park, Jin‐Seong1,2, jsparklime@hanyang.ac.kr
Source: Advanced Electronic Materials; 6/8/2026, Vol. 12 Issue 11, p1-9, 9p
Database: Applied Science & Technology Source
Description
ISSN:2199160X
DOI:10.1002/aelm.202500825