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Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation.

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Title: Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation.
Authors: Lee, Jun‐Yeoub1, Hwang, Taewon2, Choi, Su‐Hwan1, Oh, Hye‐Jin2, Park, Chang‐Kyun3, Park, Jin‐Seong1,2, jsparklime@hanyang.ac.kr
Source: Advanced Electronic Materials; 6/8/2026, Vol. 12 Issue 11, p1-9, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194490756
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; 6/8/2026, Vol. 12 Issue 11, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194490756
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        Value: 10.1002/aelm.202500825
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        Text: English
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              Text: 6/8/2026
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              Y: 2026
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