APA (7th ed.) Citation

Zhang, Y., Zhang, G., Wei, X., & Zhou, W. (2026). A resistive switching-based dual grid nanoscale vacuum channel transistor working as a material implication logic gate. Journal of Physics D: Applied Physics, 59(25), 1. https://doi.org/10.1088/1361-6463/ae7a84

Chicago Style (17th ed.) Citation

Zhang, Yan, Gengmin Zhang, Xianlong Wei, and Wensheng Zhou. "A Resistive Switching-based Dual Grid Nanoscale Vacuum Channel Transistor Working as a Material Implication Logic Gate." Journal of Physics D: Applied Physics 59, no. 25 (2026): 1. https://doi.org/10.1088/1361-6463/ae7a84.

MLA (9th ed.) Citation

Zhang, Yan, et al. "A Resistive Switching-based Dual Grid Nanoscale Vacuum Channel Transistor Working as a Material Implication Logic Gate." Journal of Physics D: Applied Physics, vol. 59, no. 25, 2026, p. 1, https://doi.org/10.1088/1361-6463/ae7a84.