View in EDS HTML Full Text PDF Full Text

Preparation of High-Quality Low-Temperature PECVD Silicon Nitride Films: Effect of NH 3 Precursor on Film Properties and RF Response Mechanism.

Saved in:
Bibliographic Details
Title: Preparation of High-Quality Low-Temperature PECVD Silicon Nitride Films: Effect of NH 3 Precursor on Film Properties and RF Response Mechanism.
Authors: Tang, Zhen1,2, Yu, Peng2, Qi, Yanli1,2, Wang, Zhuo2, Ning, Jianping2, Ren, Zhaohui1, zhhren@mail.neu.edu.cn
Source: Coatings (2079-6412); Jun2026, Vol. 16 Issue 6, p737, 17p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:20796412
DOI:10.3390/coatings16060737