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Preparation of High-Quality Low-Temperature PECVD Silicon Nitride Films: Effect of NH 3 Precursor on Film Properties and RF Response Mechanism.

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Title: Preparation of High-Quality Low-Temperature PECVD Silicon Nitride Films: Effect of NH 3 Precursor on Film Properties and RF Response Mechanism.
Authors: Tang, Zhen1,2, Yu, Peng2, Qi, Yanli1,2, Wang, Zhuo2, Ning, Jianping2, Ren, Zhaohui1, zhhren@mail.neu.edu.cn
Source: Coatings (2079-6412); Jun2026, Vol. 16 Issue 6, p737, 17p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194909831
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Preparation of High-Quality Low-Temperature PECVD Silicon Nitride Films: Effect of NH 3 Precursor on Film Properties and RF Response Mechanism.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194909831
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.3390/coatings16060737
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 17
        StartPage: 737
    Titles:
      – TitleFull: Preparation of High-Quality Low-Temperature PECVD Silicon Nitride Films: Effect of NH 3 Precursor on Film Properties and RF Response Mechanism.
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            NameFull: Tang, Zhen
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            NameFull: Yu, Peng
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            NameFull: Qi, Yanli
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            NameFull: Wang, Zhuo
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            NameFull: Ning, Jianping
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            NameFull: Ren, Zhaohui
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            – D: 01
              M: 06
              Text: Jun2026
              Type: published
              Y: 2026
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              Value: 20796412
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              Value: 16
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              Value: 6
          Titles:
            – TitleFull: Coatings (2079-6412)
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