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Nano-scale Al redistribution at grain boundaries governs growth morphology in β-(AlxGa1-x)2O3 on sapphire substrate via MOCVD.

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Title: Nano-scale Al redistribution at grain boundaries governs growth morphology in β-(AlxGa1-x)2O3 on sapphire substrate via MOCVD.
Authors: Huang, Chih Yang1,2, Gucmann, Filip3, Singh, Anoop Kumar4, Chen, Po-Hsun5, Hsiao, Chien-Nan6, Dobročka, Edmund3, Ťapajna, Milan3, Píš, Igor3, Mičušík, Matej7, Rana, Siddharth1, Wuu, Dong-Sing4,5, Liu, Po-Liang4,5, Järrendahl, Kenneth8, Hsiao, Ching-Lien8, Horng, Ray-Hua1,8,9, rayhua@nycu.edu.tw
Source: Discover Nano; 7/6/2026, Vol. 21 Issue 1, p1-21, 21p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 195150676
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  Data: Nano-scale Al redistribution at grain boundaries governs growth morphology in β-(AlxGa1-x)2O3 on sapphire substrate via MOCVD.
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