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CFET channel stack fabrication by wafer-to-wafer bonding and BESOI donor dismounting.

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Title: CFET channel stack fabrication by wafer-to-wafer bonding and BESOI donor dismounting.
Authors: Tchoulfian, P.1, pauline.tchoulfian@cea.fr, Barge, D.1, Hartmann, J.M.1, Kerdilès, S.1, Larrey, V.1, Fournel, F.1, Loup, V.1, Hauchecorne, P.1, Papon, A.M.1, Thouvard, A.1, Richy, J.1, Mazel, Y.1, Gauthier, N.1, Fraczkiewicz, A.1, Pares, G.1, Schippers, D.2, Jain, U.2, Brems, S.2, Loo, R.2,3, Chan, B.T.2
Source: Materials Science in Semiconductor Processing; Nov2026, Vol. 214, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 195251110
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: CFET channel stack fabrication by wafer-to-wafer bonding and BESOI donor dismounting.
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>; Nov2026, Vol. 214, pN.PAG-N.PAG, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=195251110
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        Text: English
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              Text: Nov2026
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