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Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.

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Title: Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.
Authors: Eih-Zhe Liang1, Chao-Jei Huang1, Ching-Fuh Lin1,2,3, cflin@cc.ee.ntu.edu.tw
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Mar/Apr2006, Vol. 24 Issue 2, p599-603, 5p, 3 Black and White Photographs, 1 Diagram, 2 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 23078783
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.
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  Data: <searchLink fieldCode="AU" term="%22Eih-Zhe+Liang%22">Eih-Zhe Liang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chao-Jei+Huang%22">Chao-Jei Huang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ching-Fuh+Lin%22">Ching-Fuh Lin</searchLink><relatesTo>1,2,3</relatesTo>, <i>cflin@cc.ee.ntu.edu.tw</i>
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=23078783
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1116/1.2172251
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 599
    Titles:
      – TitleFull: Use of SiO2 nanoparticles as etch mask to generate Si nanorods by reactive ion etch.
        Type: main
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      – PersonEntity:
          Name:
            NameFull: Eih-Zhe Liang
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          Name:
            NameFull: Chao-Jei Huang
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            NameFull: Ching-Fuh Lin
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            – D: 01
              M: 03
              Text: Mar/Apr2006
              Type: published
              Y: 2006
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              Value: 10711023
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              Value: 24
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              Value: 2
          Titles:
            – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
              Type: main
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