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Grazing Incidence X-ray Diffraction of a Photoaligned Nematic Semiconductor.

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Title: Grazing Incidence X-ray Diffraction of a Photoaligned Nematic Semiconductor.
Authors: Stefan Dröge1, Manea S. Al Khalifah1, Mary O’Neill1, Huw E. Thomas1, Henje S. Simmonds1, J. Emyr Macdonald1, Matthew P. Aldred1, Panos Vlachos1, Stuart P. Kitney1, Andreas Löbbert1, Stephen M. Kelly1
Source: Journal of Physical Chemistry B; Jan2009, Vol. 113 Issue 1, p49-53, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 35924221
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Grazing Incidence X-ray Diffraction of a Photoaligned Nematic Semiconductor.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Physical+Chemistry+B%22">Journal of Physical Chemistry B</searchLink>; Jan2009, Vol. 113 Issue 1, p49-53, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=35924221
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        Value: 10.1021/jp803379a
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      – Code: eng
        Text: English
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        PageCount: 5
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      – TitleFull: Grazing Incidence X-ray Diffraction of a Photoaligned Nematic Semiconductor.
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            NameFull: Stefan Dröge
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              Text: Jan2009
              Type: published
              Y: 2009
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            – TitleFull: Journal of Physical Chemistry B
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