Pan, C., Hou, R., Hsin, Y., & Chiu, H. (2009). DC characteristics of AZO/GaN heterojunction bipolar transistors. Electronics Letters (Institution of Engineering & Technology), 45(4), 230. https://doi.org/10.1049/el:20093076
Chicago Style (17th ed.) CitationPan, C.-T, R.-J Hou, Y.-M Hsin, and H.-C Chiu. "DC Characteristics of AZO/GaN Heterojunction Bipolar Transistors." Electronics Letters (Institution of Engineering & Technology) 45, no. 4 (2009): 230. https://doi.org/10.1049/el:20093076.
MLA (9th ed.) CitationPan, C.-T, et al. "DC Characteristics of AZO/GaN Heterojunction Bipolar Transistors." Electronics Letters (Institution of Engineering & Technology), vol. 45, no. 4, 2009, p. 230, https://doi.org/10.1049/el:20093076.
Warning: These citations may not always be 100% accurate.