DC characteristics of AZO/GaN heterojunction bipolar transistors.
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| Title: | DC characteristics of AZO/GaN heterojunction bipolar transistors. |
|---|---|
| Authors: | Pan, C.-T.1, Hou, R.-J.1, Hsin, Y.-M.1, yhsin@ee.ncu.edu.tw, Chiu, H.-C.2 |
| Source: | Electronics Letters (Institution of Engineering & Technology); 2/12/2009, Vol. 45 Issue 4, p230-231, 2p, 1 Diagram, 2 Graphs |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 36462119 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=36462119 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1049/el:20093076 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 2 StartPage: 230 Titles: – TitleFull: DC characteristics of AZO/GaN heterojunction bipolar transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Pan, C.-T. – PersonEntity: Name: NameFull: Hou, R.-J. – PersonEntity: Name: NameFull: Hsin, Y.-M. – PersonEntity: Name: NameFull: Chiu, H.-C. IsPartOfRelationships: – BibEntity: Dates: – D: 12 M: 02 Text: 2/12/2009 Type: published Y: 2009 Identifiers: – Type: issn-print Value: 00135194 Numbering: – Type: volume Value: 45 – Type: issue Value: 4 Titles: – TitleFull: Electronics Letters (Institution of Engineering & Technology) Type: main |
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