Mathiot, D. (1991). Quenched-in defect removal through silicide formation by rapid thermal processing. Applied Physics Letters, 58(2), 131. https://doi.org/10.1063/1.104950
Chicago Style (17th ed.) CitationMathiot, Daniel. "Quenched-in Defect Removal Through Silicide Formation by Rapid Thermal Processing." Applied Physics Letters 58, no. 2 (1991): 131. https://doi.org/10.1063/1.104950.
MLA (9th ed.) CitationMathiot, Daniel. "Quenched-in Defect Removal Through Silicide Formation by Rapid Thermal Processing." Applied Physics Letters, vol. 58, no. 2, 1991, p. 131, https://doi.org/10.1063/1.104950.
Warning: These citations may not always be 100% accurate.