APA (7th ed.) Citation

Wang, D., Chao, J., Hung, S., & Lin, C. (2009). Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask. Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, 27(6), 2449. https://doi.org/10.1116/1.3265468

Chicago Style (17th ed.) Citation

Wang, Ding-Shin, Jiun-Jie Chao, Shih-Che Hung, and Ching-Fuh Lin. "Fabrication of Large-area Gallium Arsenide Nanowires Using Silicon Dioxide Nanoparticle Mask." Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures 27, no. 6 (2009): 2449. https://doi.org/10.1116/1.3265468.

MLA (9th ed.) Citation

Wang, Ding-Shin, et al. "Fabrication of Large-area Gallium Arsenide Nanowires Using Silicon Dioxide Nanoparticle Mask." Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures, vol. 27, no. 6, 2009, p. 2449, https://doi.org/10.1116/1.3265468.