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Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask.

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Title: Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask.
Authors: Ding-Shin Wang1, Jiun-Jie Chao1, Shih-Che Hung1, Ching-Fuh Lin2, cfin@cc.ee.ntu.edu.tw
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Nov2009, Vol. 27 Issue 6, p2449-2452, 4p, 3 Black and White Photographs, 1 Diagram, 1 Chart
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 46745566
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask.
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  Data: <searchLink fieldCode="AU" term="%22Ding-Shin+Wang%22">Ding-Shin Wang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiun-Jie+Chao%22">Jiun-Jie Chao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Shih-Che+Hung%22">Shih-Che Hung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ching-Fuh+Lin%22">Ching-Fuh Lin</searchLink><relatesTo>2</relatesTo>, <i>cfin@cc.ee.ntu.edu.tw</i>
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=46745566
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1116/1.3265468
    Languages:
      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 2449
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      – TitleFull: Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask.
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            NameFull: Ding-Shin Wang
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            NameFull: Jiun-Jie Chao
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            NameFull: Shih-Che Hung
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            NameFull: Ching-Fuh Lin
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            – D: 01
              M: 11
              Text: Nov2009
              Type: published
              Y: 2009
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              Value: 10711023
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              Value: 27
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              Value: 6
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            – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
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